Thin film transistor and method for manufacturing the same

A method for manufacturing a thin film transistor, comprising:

• (a) forming a metal oxide semiconductor layer on a substrate, the metal oxide semiconductor layer having an initial oxygen vacancy concentration;
• (b) forming a first insulating layer on the metal oxide semiconductor layer;
• (c) forming a first patterned conductive layer on the first insulating layer, wherein the first patterned conductive layer has at least one first opening, and a projection of the first opening onto the substrate overlaps a projection of the metal oxide semiconductor layer onto the substrate;
• (d) treating the metal oxide semiconductor layer to form a channel region having at least one first region by using the first patterned conductive layer as a mask such that the first region has an oxygen vacancy concentration greater than the initial oxygen vacancy concentration;
• and
• (e) forming a source electrode and a drain electrode respectively on opposite sides of the channel region.