US 2013/0153888 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Abstract

Disclosed is a semiconductor device provided with an active element in a multilayer interconnect layer and decreased in a chip area. A second interconnect layer is provided over a first interconnect layer. A first interlayer insulating layer is provided in the first interconnect layer. A semiconductor layer is provided in a second interconnect layer and in contact with the first interlayer insulating layer. A gate insulating film is provided over the semiconductor layer. A gate electrode is provided over the gate insulating film. At least two first vias are provided in the first interconnect layer and in contact by way of upper ends thereof with the semiconductor layer.

Claims32

Dependent claims

A semiconductor device comprising:

a substrate;
a first interconnect layer provided over the substrate;
a second interconnect layer provided over the first interconnect layer;
a first interlayer insulating layer provided in the first interconnect layer;
a semiconductor layer provided in the second interconnect layer and in contact with the first interlayer insulating layer;
a gate insulating film provided over the semiconductor layer;
a gate electrode provided over the gate insulating film;
and
at least two first vias provided in the first interconnect layer and in contact by way of upper ends thereof with the semiconductor layer.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the semiconductor device

Life of this patent

Semiconductor device and method of manufacturing the semiconductor device

Life of this patent

Abstract

Claims32