US 2013/0153886 A1 · SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract

The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.

Claims17

Dependent claims

A metal-oxide-semiconductor device, comprising:

a III-V semiconductor layer;
an aluminum oxide layer formed on the III-V semiconductor layer;
and
a lanthanide oxide layer formed on the aluminum oxide layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/477,868Filed 22 May 2012

Priority

TW 10014664115 Dec 2011

Published

20 Jun 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates
H10D 1/66
Capacitors having potential barriers: conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
H10D 64/01358
Of electrodes having a conductor capacitively coupled to a semiconductor by an insulator: the insulator being formed after the semiconductor body,…
H10P 14/6329
Deposition from the gas or vapour phase: using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims17