Thin-film transistor substrate and method for fabricating the same, display
AssigneesChimei Innolux Corporation, Innocom Technology (Shenzhen) Co., Ltd.
InventorSzu-Wei LAI
Life of this patent
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Abstract
The invention provides a thin-film transistor substrate, including: a substrate; a metal lead structure formed on the substrate, wherein the metal lead structure includes: a main conductor layer formed on the substrate, wherein the main conductor has a sidewall; a top conductor layer having a first portion, second portion and third portion, wherein the first portion is formed on the main conductor layer, the second portion is formed on the sidewall of the main conductor layer, and the third portion is formed on the substrate, and a continuous structure is formed by the first portion, the second portion and the third portion.
Claims20
A thin-film transistor substrate, comprising:
- a substrate;
- and
- a metal lead structure formed on the substrate, wherein the metal lead structure comprises:
- a main conductor layer formed on the substrate, wherein the main conductor has a sidewall;
- and
- a top conductor layer having a first portion, second portion and a third portion, wherein the first portion is formed on the main conductor layer, the second portion is formed on the sidewall of the main conductor layer, and the third portion is formed on the substrate, and a continuous structure is made by the first portion, the second portion and the third portion.
A method for fabricating a thin-film transistor substrate, comprising:
- providing a substrate;
- sequentially forming a main conductor layer and a top conductor layer on the substrate;
- forming a patterned photoresist layer on the top conductor layer;
- performing a first etching step to remove a portion of the main conductor layer and a portion of the top conductor layer and to expose sidewall of the main conductor layer and the substrate;
- performing a second etching step, wherein an etching rate of the main conductor layer is larger than that of the top conductor layer to make the top conductor layer extend downward to cover the main conductor layer, and the top conductor layer has a first portion formed on the main conductor layer, a second portion formed on the sidewall of the main conductor layer, a third portion formed on the substrate, and a continuous structure is made by the first portion, the second portion and the third portion;
- and
- removing the patterned photoresist layer.
Dependencies are inferred from the claim text.