Ambipolar inverter device structure and manufacturing method thereof
AssigneeIndustrial Technology Research Institute
InventorsChao-Feng Sung, Yen-Min Hsieh
Life of this patent
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Abstract
An ambipolar inverter device suitable for use in an integrated circuit. An electron blocking layer and a hole blocking layer are respectively disposed at two sides of the ambipolar semiconductor layer, so that the operation of the inverter may be executed in a single device. In addition, the manufacturing method of the disclosure is simple, adopting only one patterning step, so as to effectively improve the performance of the ambipolar device.
Claims46
An ambipolar inverter device structure, comprising:
- a gate, disposed on a substrate;
- two first electrodes, disposed on the substrate, and respectively located at two sides of the gate and on a first plane;
- two second electrodes, disposed on the substrate, and respectively located at two sides of the gate and on a second plane, wherein one of the first electrodes is electrically connected to one of the second electrodes;
- an ambipolar semiconductor layer, disposed between the first plane and the second plane;
- a first carrier blocking layer, disposed between the ambipolar semiconductor layer and each of the first electrodes;
- a second carrier blocking layer, disposed between the ambipolar semiconductor layer and each of the second electrodes;
- and
- a dielectric layer, disposed between the gate and each of the second electrodes.
A manufacturing method of an ambipolar inverter device structure, comprising:
- forming two first electrodes on a substrate;
- forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the substrate, so as to cover the first electrodes;
- patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a stack structure exposing a part of one of the first electrodes;
- forming two second electrodes on the substrate, wherein one of the first electrodes is electrically connected to one of the second electrodes;
- forming a dielectric layer on the substrate, so as to cover the stack structure and the second electrodes;
- and
- forming a gate on the dielectric layer between the second electrodes.
A manufacturing method of an ambipolar inverter device structure, comprising:
- forming a gate on a substrate;
- forming a dielectric layer covering the gate on the substrate;
- forming two first electrodes on the dielectric layer;
- forming a first carrier blocking material layer, an ambipolar semiconductor material layer and a second carrier blocking material layer on the dielectric layer, so as to cover the first electrodes;
- patterning the first carrier blocking material layer, the ambipolar semiconductor material layer and the second carrier blocking material layer, so as to form a stack structure exposing a part of one of the first electrodes;
- and
- forming two second electrodes on the stack structure, wherein one of the first electrodes is electrically connected to one of the second electrodes.
Dependencies are inferred from the claim text.