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US 2013/0153860 A1Published application
Method of forming hybrid nanostructure on graphene, hybrid nanostructure, and device including the hybrid nanostructure
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-woo KIM, Hyun-kyu PARK
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Abstract
A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.
Claims21
A method of forming a hybrid nanostructure on graphene, the method comprising:
- providing a graphene layer on a substrate;
- forming a metal layer on the graphene layer;
- and
- chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.
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A composite nanostructure comprising:
- a substrate;
- a graphene layer formed on the substrate;
- and
- a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire.
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A hybrid nanostructure comprising:
- a nanowall;
- and
- a nanowire abutting the nanowall,
- wherein the nanowall and the nanowire comprise a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, or a combination thereof;
- and
- wherein a thickness of the nanowall is about 5 to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm.
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Dependencies are inferred from the claim text.