Nitride semiconductor template and light-emitting diode
AssigneeHitachi Cable, Ltd.
InventorsTaichiroo Konno, Hajime Fujikura
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Abstract
A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer formed on the substrate and including a Si-doped layer doped with Si as an uppermost layer thereof. The group III nitride semiconductor layer has a total thickness of not less than 4 μm and not more than 10 μm. The Si-doped layer includes a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×1017 cm−3 and not more than 5×1017 cm−3 at the outermost surface of the group III nitride semiconductor layer.
Claims9
A nitride semiconductor template, comprising:
- a substrate;
- and
- a group III nitride semiconductor layer formed on the substrate and comprising a Si-doped layer doped with Si as an uppermost layer thereof,
- wherein the group III nitride semiconductor layer has a total thickness of not less than 4 μm and not more than 10 μm, and
- wherein the Si-doped layer comprises a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×1017 cm−3 and not more than 5×1017 cm−3 at the outermost surface of the group III nitride semiconductor layer.
A light-emitting diode, comprising:
- a sapphire substrate;
- an AlN buffer layer formed on the sapphire substrate;
- an n-type group III nitride semiconductor layer formed on the AlN buffer layer;
- a multiple quantum well layer formed on the n-type group III nitride semiconductor layer;
- a p-type nitride semiconductor layer formed on the multiple quantum well layer;
- an exposed portion of the n-type group III nitride semiconductor layer formed by etching from the p-type nitride semiconductor layer to the n-type group III nitride semiconductor layer;
- an n-type electrode formed on the exposed portion of the n-type group III nitride semiconductor layer;
- and
- a p-type electrode formed on the p-type nitride semiconductor layer,
- wherein the n-type group III nitride semiconductor layer comprises a group III nitride semiconductor layer comprising a Si-doped layer doped with Si as an uppermost layer thereof,
- wherein the group III nitride semiconductor layer has a total thickness of not less than 4 μm and not more than 10 μm, and
- wherein the Si-doped layer comprises a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×1017 cm−3 and not more than 5×1017 cm−3 at the outermost surface of the group III nitride semiconductor layer.
Dependencies are inferred from the claim text.