Semiconductor light emitting device

Abstract

In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode, a second electrode and a transparent conductive film. The stacked structure includes a first semiconductor layer with a first conductivity type, a light emitting layer and a second semiconductor layer with a second conductivity type which are formed and stacked directly or indirectly. The stacked structure is taken out light from the light emitting layer side to the second semiconductor layer side. The first electrode is connected to the first semiconductor layer. The second electrode is connected to a first principal surface of the second semiconductor layer which is exposed at the light emitting layer side. The second electrode is arranged in parallel with the first electrode. The transparent conductive film is provided so as to cover a second principal surface of the second semiconductor layer.

Dependencies are inferred from the claim text.