Diamond type quad-resistor cells of pram
AssigneeQUALCOMM Incorporated
InventorXia Li
Life of this patent
Estimating the term…
Abstract
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.
Claims7
A phase-change random access memory (PRAM) arrangement comprising:
- a common heater resistor having a plurality of first leg portions extending in a first plane and at least one second leg portion extending in a second plane;
- and
- a phase change material (PCM) film over an end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor,
- wherein the interface between the phase change material (PCM) film and the end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor forms active regions.
A method of forming a three-dimensional phase-change random access memory (PRAM) cell arrangement, the method comprising:
- forming a common heater resistor, wherein the heater resistor includes a plurality of first leg portions extending in a first plane and at least one second leg portion extending in a second plane;
- and
- forming a phase change material (PCM) film over an end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor to form active regions.
Dependencies are inferred from the claim text.