Horizontally oriented and vertically stacked memory cells

A memory device, comprising:

• a first vertical stack of memory cells and a second vertical stack of memory cells, wherein the memory cells in the first and second vertical stacks include:
• a memory cell material;
• an access device contact adjacent a first side of the memory cell material;
• and
• a metal material adjacent a second side of the memory cell material.

A memory device, comprising:

• a first vertical stack of resistive memory cells and a second vertical stack of resistive memory cells, wherein each resistive memory cell in the first and second vertical stacks includes:
• a resistive memory cell material;
• a portion of an electrode adjacent a first side of the resistive memory cell material;
• and
• a portion of an additional electrode adjacent a second side of the resistive memory cell material, wherein each resistive memory cell includes a portion of a different additional electrode.