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AssigneeKabushiki Kaisha Toshiba
InventorsHidehiko Yabuhara, Takashi Hirotani, Junji Kataoka, Hisashi Kameoka
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According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element.
A nonvolatile memory device comprising a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode,
A method for manufacturing a nonvolatile memory device including a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode comprising:
Dependencies are inferred from the claim text.