Non-volatile memory with resistive access component
AssigneeMicron Technology, Inc.
InventorsJun Liu, Michael P. Violette
Life of this patent
Estimating the term…
Abstract
Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.
Claims20
An apparatus comprising:
- a memory element including memory material configured to store information;
- and
- an access component coupled in series with the memory element and configured to enable conduction of current through the memory element, the access component includes a material, wherein the material excludes silicon and includes a bipolar switching material.
An apparatus comprising:
- a first device level including a first memory cell;
- a second device level stacked over the first device level, the second device level including a second memory cell, each of the first and second memory cells including a memory element and an access component coupled to the memory element, the access component includes a material, wherein the material excludes silicon;
- a first conductive line coupled to one of the first and second memory cells;
- and
- a second conductive line coupled to one of the first and second memory cells, wherein the first conductive line is substantially perpendicular to the second conductive line.
A method comprising:
- depositing multiple layers of materials;
- and
- removing a portion of each layer of the multiple layers to form pillars, each of the pillars including part of a memory cell, the memory cell including a memory element coupled in series with an access component, the memory element included in a first part of the pillar, and the access component included in a second part of the pillar having a material that excludes silicon.
Dependencies are inferred from the claim text.