Resistive memory device and method of manufacturing the same

A resistive memory device, comprising:

• a semiconductor substrate;
• a pair of first resistive memory cells formed on the semiconductor substrate;
• a first interlayer insulating layer formed on the pair of first resistive memory cells;
• a pair of second resistive memory cells formed on the first interlayer insulating layer at positions above the pair of first resistive memory cells;
• a common source line electrically connected to the first and second resistive memory cells;
• and
• a bit line electrically connected to the first and second resistive memory cells,
• wherein each of the first and second resistive memory cells includes a switching transistor and a resistive device layer connected to the switching transistor.

A method of manufacturing a resistive memory device, comprising:

• forming a first active layer on a semiconductor substrate;
• forming a first switching transistor and a resistive device layer in the first active layer;
• forming a first interlayer insulating layer on a structure including the first active layer;
• forming a second active layer on the first interlayer insulating layer;
• forming a second switching transistor and a resistive device layer in the second active layer;
• forming a common source line to be in contact with source regions of the first and second switching transistors;
• forming a second interlayer insulating layer on a structure including the common source line;
• forming a bit line contact unit to be in contact with the resistive device layers;
• and
• forming a bit line on the second interlayer insulating layer to be connected to the bit line contact unit.