Nonvolatile resistive memory element with a metal nitride containing switching layer

A method of forming a nonvolatile memory element, the method comprising:

• forming a first layer, wherein the first layer is operable as an electrode;
• depositing a second layer comprising a metal layer above the first layer using an atomic layer deposition (ALD) process;
• oxidizing the metal layer of the second layer by heating the metal layer while exposing the metal layer to an oxygen-containing gas;
• depositing a third layer comprising a metal layer above the oxidized second layer using an ALD process;
• diffusing nitrogen into the metal layer of the third layer by exposing the metal layer of the third layer to a nitrogen-containing gas;
• and
• forming a fourth layer operable as an electrode, so that the second layer and the third layer are disposed between the first layer and the fourth layer.

A method of forming a nonvolatile memory element, the method comprising:

• forming a first layer operable as an first electrode layer;
• depositing a second layer comprising a metal layer above the first layer using an ALD process;
• oxidizing the metal layer of the second layer by heating the metal layer while exposing the metal layer to an oxygen-containing gas;
• diffusing nitrogen into the metal layer of the second layer by exposing the metal layer to a reactive nitrogen-containing gas;
• and
• forming a third layer operable as a an electrode layer, so that the metal layer of the second layer is disposed between the first layer and the third layer.

A method of forming a nonvolatile memory element, the method comprising:

• forming a first layer operable as an electrode;
• depositing a second layer comprising a metal oxide layer above the first layer;
• performing a nitridization process on the metal oxide layer of the second layer to form a metal oxide-nitride layer;
• and
• forming a third layer operable as an electrode layer, so that the metal oxide-nitride nitride layer of the second layer is disposed between the first layer and the third layer.