Waveguide photomixer

Abstract

Provided is a waveguide photomixer in which an absorption layer is selectively etched to reduce a junction area. The waveguide photomixer includes a buffer layer disposed on a substrate, a first clad layer disposed on the buffer layer and formed to have smaller width than that of a top surface of the buffer layer, an absorption layer disposed on the first clad layer and formed to have smaller width than that of a top surface of the first clad layer, a second clad layer disposed on the absorption layer and formed to have greater width than that of a top surface of the absorption layer, a contact layer disposed on the second clad layer, a first electrode unit disposed on the buffer layer where the first clad layer is not disposed, and a second electrode unit disposed on the contact layer.

Dependencies are inferred from the claim text.