Indium Target And Method For Manufacturing Same
AssigneeJX Nippon Mining & Metals Corporation
InventorsYousuke Endo, Takamasa Maekawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeJX Nippon Mining & Metals Corporation
InventorsYousuke Endo, Takamasa Maekawa
Estimating the term…
Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm3 or less.
An indium target wherein:
A method for manufacturing an indium target, the method comprising melting and casting an indium raw material, wherein ultrasonic vibration is applied at least at the time of solidification of the indium raw material.
Dependencies are inferred from the claim text.