Solar cell and method for manufacturing the same
AssigneeLG Electronics Inc.
InventorsKyoungsoo LEE, Myungjun SHIN, Jiweon JEONG
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Abstract
A method for manufacturing a solar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.
Claims20
A method for manufacturing a solar cell, comprising:
- texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method;
- forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate;
- forming a back passivation film on a back surface of the semiconductor substrate;
- and
- forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.
A solar cell, comprising:
- a semiconductor substrate having a first conductive type dopant, wherein a front surface of the semiconductor substrate has a surface roughness larger than that of a back surface of the semiconductor substrate;
- an emitter layer formed adjacent to the front surface of the semiconductor substrate and having a second conductive type dopant;
- a back surface field layer formed adjacent to the semiconductor substrate and having the first conductive type dopant;
- a front passivation film for passivating the front surface of the semiconductor substrate;
- a back passivation film for passivating the back surface of the semiconductor substrate;
- a first electrode electrically connected to the emitter layer;
- and
- a second electrode being in partial contact with the back surface of the semiconductor substrate,
- wherein the front surface of the semiconductor substrate has a surface roughness of about 1 μm or less.
Dependencies are inferred from the claim text.