Photoelectric converter and method of manufacturing photoelectric converter

A photoelectric converter comprising:

• an electrode layer;
• and
• a semiconductor layer on the electrode layer, containing a chalcopyrite compound semiconductor, and comprising a plurality of sub-layers, the sub-layers comprising:
• a first sub-layer located closest to the electrode layer, and having a first thickness smaller than an average thickness of the rest of the plurality of sub-layers.

A method of manufacturing a photoelectric converter, comprising:

• forming a first precursor layer on an electrode layer, the first precursor layer containing a constituent element of a chalcopyrite compound semiconductor;
• forming a second precursor layer on the first precursor layer, wherein the second precursor layer contains a constituent element of a chalcopyrite compound semiconductor, and is thicker than the first precursor layer;
• and
• heating the first precursor layer and the second precursor layer to form a semiconductor layer containing the chalcopyrite compound semiconductor.

A photoelectric converter comprising:

• an electrode layer;
• and
• a semiconductor layer on the electrode layer, containing a chalcopyrite compound semiconductor, and comprising a plurality of sub-layers, the sub-layers:
• a first sub-layer located closest to the electrode layer;
• and
• a second sub-layer located on the first sub-layer,
• wherein the first sub-layer has a thickness smaller than a thickness of the second sub-layer.