Micromechanical semiconductor sensing device

Micromechanical semiconductor pressure sensing device, comprising

• a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm, and
• wherein at least one piezoresistive sensing device is buried in the diaphragm, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal.

Method for manufacturing a micromechanical semiconductor sensing device, the method comprising:

• structuring a micromechanical sensing structure configured to yield an electrical sensing signal, and
• providing at least one piezoresistive sensing device in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Method for manufacturing a micromechanical semiconductor pressure sensing device, the method comprising:

• structuring a movable diaphragm above a hollow space, wherein the diaphragm is part of a capacity configured to yield an electrical sensing signal in response to a pressure acting on the diaphragm, and
• wherein at least one piezoresistive sensing device is buried in diaphragm, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Micromechanical semiconductor sensing device, comprising

• a micromechanical sensing structure being configured to yield an electrical sensing signal, and
• a means for sensing a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal, wherein said means is provided in the micromechanical sensing structure.

Method for sensing an external force on a device, the method comprising:

• simultaneously determining an electrical sensing signal describing the external force and an electrical disturbance signal describing mechanical stress on the device, the mechanical stress disturbing the electrical sensing signal;
• and
• compensating based on the electrical disturbance signal a disturbance in the electrical sensing signal caused by the mechanical stress.