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US 2013/0095660 A1Published application
Method for polishing silicon wafer
AssigneeSumco Corporation
InventorsRyuichi Tanimoto, Shinya Sadohara, Takeru Takushima
Life of this patent
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Abstract
To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the haze value of the finish-polished surface of the wafer is used as the chief component of the final polishing solution.
Claims9
A method for polishing a silicon wafer, comprising:
- rotating a polishing cloth and the silicon wafer relative to each other while supplying a finish polishing solution containing free abrasive grains to the polishing cloth to finish polish at least a front surface of the front and rear surfaces of the silicon wafer;
- and
- after the finish polishing, rotating the polishing cloth and the silicon wafer relative to each other while supplying a final polishing solution chiefly composed of a weakly basic aqueous solution not containing free abrasive grains to the polishing cloth to final polish a surface of the silicon wafer that has been finish polished, wherein
- an alkali concentration of the weakly basic aqueous solution is adjusted in the final polishing solution such that a haze value of the final-polished surface of the silicon wafer is lower than the haze value of the finish-polished surface of the silicon wafer.
1 more element
Dependencies are inferred from the claim text.