Metal organic chemical vapor deposition method and apparatus

Abstract

A metal organic chemical vapor deposition (MOCVD) method and apparatus are provided. The MOCVD method includes: providing a substrate, in which a metal-based material layer is disposed on a first surface of the substrate; putting the substrate on a base in a chamber, in which the metal-based material layer is between the substrate and the base; and performing a MOCVD process on a second surface opposite to the first surface. The difference in thermal conductivity between the metal-based material layer and the substrate is in the range of 1 W/m° C. to 20 W/m° C., and the thermal expansion coefficients of the metal-based material layer and the substrate are of the same order.

Dependencies are inferred from the claim text.