Post-etch treating method
AssigneeSemiconductor Manufacturing International (Beijing) Corporation
InventorsHAIYANG ZHANG, Minda Hu, Junqing Zhou, Dongjiang Wang
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Abstract
This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer; and performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.
Claims20
A post-etch treating method, an opening being formed in a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top by the etching, the treating method sequentially comprising steps of:
- performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer;
- and
- performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.
Dependencies are inferred from the claim text.