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US 2013/0095630 A1Published application
Threshold mismatch and iddq reduction using split carbon co-implantation
AssigneeTexas Instruments Incorporated
InventorsEbenezer Eshun, Himadri Sekhar Pal, Amitabh Jain
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Abstract
An integrated circuit containing MOS transistors may be formed using a split carbon co-implantation. The split carbon co-implant includes an angled carbon implant and a zero-degree carbon implant that is substantially perpendicular to a top surface of the integrated circuit. The split carbon co-implant is done at the LDD and halo implant steps.
Claims20
A method of forming an integrated circuit, comprising the steps of:
- providing a substrate comprising a semiconductor;
- implanting lightly doped drain (LDD) dopants into said substrate to form LDD implanted regions adjacent to a gate in an area for a metal oxide semiconductor (MOS) transistor;
- implanting halo dopants at an angle into said substrate to form halo implanted regions adjacent to said gate and extending past said LDD implanted regions;
- performing an angled carbon implant which implants carbon ions at an angle into said substrate to form angled carbon implanted regions adjacent to said gate and extending past said LDD implanted regions;
- and
- performing a zero-degree carbon implant which implants carbon ions substantially perpendicular to said top surface of the substrate into said substrate to form non-angled carbon implanted regions adjacent to said gate.
3 more elements
A method of forming an integrated circuit, comprising the steps of:
- providing a substrate comprising a semiconductor;
- forming a first LDD implant mask over said integrated circuit so as to expose a first MOS transistor and cover a second MOS transistor, said second MOS transistor having a same polarity as said first MOS transistor;
- implanting LDD dopants into said substrate to form first LDD implanted regions adjacent to a first gate of said first MOS transistor, such that said LDD dopants are blocked from said second MOS transistor by said first LDD implant mask;
- implanting first halo dopants at an angle into said substrate to form first halo implanted regions adjacent to said first gate and extending past said first LDD implanted regions, such that said first halo dopants are blocked from said second MOS transistor by said first LDD implant mask;
- performing an angled carbon implant which implants carbon ions at an angle into said substrate to form angled carbon implanted regions adjacent to said first gate and extending past said first LDD implanted regions, such that said carbon ions of said angled carbon implant are blocked from said second MOS transistor by said first LDD implant mask;
- performing a zero-degree carbon implant which implants carbon ions substantially perpendicular to said top surface of the substrate into said substrate to form non-angled carbon implanted regions adjacent to said first gate, such that said carbon ions of said zero-degree carbon implant are blocked from said second MOS transistor by said first LDD implant mask;
- forming a second LDD implant mask over said integrated circuit so as to cover said first MOS transistor and expose said second MOS transistor;
- and
- implanting second halo dopants at an angle into said substrate to form second halo implanted regions adjacent to a second gate of said second MOS transistor, such that said second halo dopants are blocked from said first MOS transistor by said second LDD implant mask.
6 more elements
Dependencies are inferred from the claim text.