Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising:

• alternately stacking a plurality of first material layers and a plurality of second material layers on a substrate;
• forming a plurality of channel holes penetrating the first material layers and the second material layers, wherein the channel holes expose the substrate;
• forming a first silicon monolayer along a profile of the exposed substrate and sidewalls of the channel holes by providing a silicon precursor having an organic ligand on the substrate to absorb silicon on the sidewalls of the channel holes and the exposed substrate;
• and
• forming a first silicon layer without void and cutting on the first silicon monolayer to form a plurality of active pillars.

A method for manufacturing a semiconductor device comprising:

• forming a groove in a substrate extending in a direction parallel to a top surface of the substrate, thereby defining a plurality of regions in the substrate which are divided by the groove;
• forming an undercut region extending from a lower area of the groove in the direction parallel to the top surface of the substrate;
• forming a gate insulating layer on sidewalls of the groove and sidewalls and a bottom surface of the undercut region;
• forming a seed layer of a silicon monolayer on the gate insulating layer by providing a silicon precursor including an organic ligand on the gate insulating layer to absorb silicon on a surface of the gate insulating layer;
• forming a silicon layer on the seed layer, wherein the silicon layer grows from the seed layer of the silicon monolayer to fill the groove without void and cutting;
• removing a portion of the silicon layer and the seed layer in an upper portion of the groove;
• forming a capping layer in the upper portion of the groove;
• and
• providing dopant ions into the regions of the substrate divided by the groove, thereby forming source/drain regions.