Semiconductor device
AssigneeRenesas Electronics Corporation
InventorHiroyuki KOBATAKE
Life of this patent
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Abstract
A semiconductor device is provided with a lower-layer circuit including a transistor formed over a semiconductor substrate, and a memory cell array formed in an interconnection layer above the semiconductor substrate. Respective memory cells of the memory cell array are provided with a variable resistor element formed in the interconnection layer serving as a memory element. The memory cell array includes a first region directly underneath the memory cells, the first region being a region where a via for electrical coupling with the memory cell is not formed. The lower-layer circuit is disposed in such a way as to overlap at least a part of the first region.
Claims7
A semiconductor device comprising:
- a lower-layer circuit including a transistor formed over a semiconductor substrate;
- and
- a memory cell array formed in an interconnection layer above the semiconductor substrate, respective memory cells of the memory cell array including a variable resistor element formed in the interconnection layer serving as a memory element,
- wherein the memory cell array includes a first region directly underneath the memory cell, the first region being a region where a via for electrical coupling with the memory cell is not formed, and
- wherein the lower-layer circuit is disposed in such a way as to overlap at least a part of the first region.
Dependencies are inferred from the claim text.