High-capacity module including the peripheral circuit using the circuit board and the circuit board concerned for peripheral circuits of a high-capacity module

A high-capacity module which comprises:

• a first electronic circuit including a power semiconductor element, and
• a second electronic circuit laminated on the side, on which said power semiconductor element is disposed, of said first electronic circuit, via said power semiconductor element, wherein:
• a substrate, which is a second electronic circuit board used for said second electronic circuit, comprises a base material which comprises a dielectric layer, inner layer electrode(s) embedded inside of said base material, first surface electrode(s) formed at a first surface that is the surface on the side of said first electronic circuit of said substrate, and at least one level difference(s) prepared at said first surface,
• the thickness of at least a part of said inner layer electrode(s) and said first surface electrode(s) is not less than 50 micrometers in a direction perpendicular to said first surface, and
• said level difference(s) are formed so that each of said terminal(s) of said power semiconductor element and each of said first surface electrode(s) may be opposed to each other, when said power semiconductor element and said substrate are in the relative positional relationship specified by contact of the lateral face(s), which intersects the surface opposed to said first surface, of said power semiconductor element with the lateral face(s), which intersects said first surface, of said level difference(s) at the time of lamination of said first electronic circuit and said second electronic circuit.