Acoustic wave device
AssigneeTaiyo Yuden Co., Ltd.
InventorsSatoru MATSUDA, Takashi MATSUDA, Michio MIURA
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Abstract
An acoustic wave device includes: an electrode that is located on a substrate and excites an acoustic wave; and an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.
Claims7
An acoustic wave device comprising:
- an electrode that is located on a substrate and excites an acoustic wave;
- and
- an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein
- a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.
Dependencies are inferred from the claim text.