Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTakao KACHI, Yasuhiro YOSHIURA, Fumihito MASUOKA
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Abstract
A semiconductor device includes: an N-type drift layer; a P-type anode layer above the N-type drift layer; an N-type cathode layer below the N-type drift layer; a first short lifetime layer between the N-type drift layer and the P-type anode layer; and a second short lifetime layer between the N-type drift layer and the N-type cathode layer. A carrier lifetime in the first and second short lifetime layers is shorter than a carrier lifetime in the N-type drift layer. A carrier lifetime in the N-type cathode layer is longer than the carrier lifetime in the N-type drift layer.
Claims2
A semiconductor device comprising:
- an N-type drift layer;
- a P-type anode layer above the N-type drift layer;
- an N-type cathode layer below the N-type drift layer;
- a first short lifetime layer between the N-type drift layer and the P-type anode layer;
- and
- a second short lifetime layer between the N-type drift layer and the N-type cathode layer,
- wherein a carrier lifetime in the first and second short lifetime layers is shorter than a carrier lifetime in the N-type drift layer, and
- a carrier lifetime in the N-type cathode layer is longer than the carrier lifetime in the N-type drift layer.
Dependencies are inferred from the claim text.