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US 2013/0093058 A1Published application
P-Type Silicon Single Crystal and Method Of Manufacturing The Same
AssigneeSiltronic AG
InventorKatsuhiko Nakai
Life of this patent
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Abstract
Silicon wafers having a resistivity >6 Ωcm and axially uniform resistivity are grown by the Czochralski method from a melt containing boron as the main dopant, an n-type first sub-dopant with a segregation coefficient lower than boron, and a p-type second sub-dopant with a segregation coefficient lower than the first sub-dopant.
Claims23
A method of manufacturing a p-type silicon single crystal, comprising the steps of:
- preparing a silicon melt to which boron as a main dopant, a first sub-dopant which is an n-type impurity with a smaller segregation coefficient than boron, and a second sub-dopant which is a p-type impurity with a smaller segregation coefficient than the first sub-dopant are added;
- and
- growing a silicon single crystal having resistivity not lower than 6 Ωcm from the silicon melt by the Czochralski method.
Dependencies are inferred from the claim text.