Semiconductor device

A semiconductor device having a protective element region and a transistor region, the semiconductor device comprising:

• a substrate;
• a semiconductor layer of a first conductive type formed on the substrate in both the protective element region and the transistor region;
• a first embedded layer of the first conductive type that is formed between the substrate and the semiconductor layer in the protective element region and has an effective impurity concentration higher than an effective impurity concentration of the semiconductor layer;
• a first well of a second conductive type formed on the semiconductor layer in the protective element region;
• a first contact layer of the first conductive type that is positioned on the semiconductor layer in the protective element region, separate from the first well;
• a second contact layer of the second conductive type formed on the first well;
• a third contact layer of the first conductive type that is positioned on the first well and formed between the first contact layer and the second contact layer;
• a first deep layer of the first conductive type that is formed between the first embedded layer and the first contact layer and makes contact with the first contact layer;
• a second embedded layer of the first conductive type that is formed between the substrate and the semiconductor layer in the transistor region and has an effective impurity concentration higher than the effective impurity concentration of the semiconductor layer;
• a second well of the second conductive type formed on the semiconductor layer in the transistor region;
• a fourth contact layer of the first conductive type that is positioned on the semiconductor layer in the transistor region, separate from the second well, and formed in an area right on the second embedded layer;
• a fifth contact layer of the second conductive type formed on the second well;
• and
• a sixth contact layer of the first conductive type that is positioned on the second well and formed between the fourth contact layer and the fifth contact layer,
• wherein the semiconductor layer is interposed between the first embedded layer and the first deep layer, and the first deep layer is closer to the first embedded layer than the first well

A semiconductor device, comprising:

• a substrate;
• a first conductive type semiconductor layer formed on the substrate;
• a first conductive type embedded layer that is formed between the substrate and the semiconductor layer and has an effective impurity concentration higher than an effective impurity concentration of the semiconductor layer;
• a second conductive type well formed on the semiconductor layer;
• a first conductive type first contact layer that is positioned on the semiconductor layer, separate from the well;
• a second conductive type second contact layer formed on the well;
• a first conductive type third contact layer that is positioned on the well and formed between the first contact layer and the second contact layer;
• and
• a first conductive type deep layer that is formed between the embedded layer and the first contact layer and makes contact with the first contact layer, wherein
• the deep layer includes a first part and a second part, the first part making contact with the second part and being closer to the embedded layer than the second part.