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US 2013/0093054 A1Published application
Semiconductor Device and Method of Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorChang Eun LEE
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Abstract
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.
Claims20
A semiconductor device comprising:
- a first insulation layer on or over a semiconductor substrate;
- metal patterns on or over the first insulation layer;
- a thin film resistor pattern over the metal patterns;
- and
- an anti-reflection layer between the thin film resistor pattern and the metal patterns.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulation layer on or over a semiconductor substrate;
- depositing a metal layer on or over the first insulation layer and patterning the metal layer to form metal patterns;
- forming a second insulation layer on or over the first insulation layer and the metal patterns;
- forming an anti-reflection layer on or over the second insulation layer;
- forming a third insulation layer on or over the anti-reflection layer;
- and
- forming a thin film resistor layer on or over the third insulation layer and patterning the thin film resistor layer to form a thin film resistor pattern.
4 more elements
Dependencies are inferred from the claim text.