Back to results
US 2013/0092999 A1Published application
Nonvolatile storage device
AssigneeElpida Memory, Inc.
InventorMotoki FUJII
Life of this patent
Estimating the term…
Abstract
A nonvolatile storage device includes a tunnel insulating film disposed on a surface of a semiconductor substrate and a charge trap layer disposed in contact with an upper surface of the tunnel insulating film. The charge trap layer includes a second charge trap film disposed in contact with the upper surface of the tunnel insulating film and a first charge trap film disposed in contact with an upper surface of the second charge trap film.
Claims13
A nonvolatile storage device comprising:
- a tunnel insulating film disposed on a surface of a semiconductor substrate;
- and
- a charge trap layer disposed in contact with an upper surface of the tunnel insulating film, the charge trap layer including a second charge trap film disposed in contact with the upper surface of the tunnel insulating film and a first charge trap film disposed in contact with an upper surface of the second charge trap film.
Dependencies are inferred from the claim text.