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US 2013/0092998 A1Published application
Memory Devices Capable Of Reducing Lateral Movement Of Charges
AssigneeSamsung Electronics Co., Ltd.
InventorKwang-Soo SEOL
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Abstract
Memory devices are provided, the memory devices include a tunneling insulating layer disposed on a substrate, a charge storage layer disposed on the tunneling insulating layer, a blocking insulating layer disposed on the charge storage layer and a control gate electrode disposed on the blocking insulating layer. The control gate electrode may have an edge portion spaced farther apart from the blocking insulating layer than a central portion of the control gate electrode to concentrate charge density distribution on a central portion of a memory cell.
Claims10
A memory device, comprising:
- a tunneling insulating layer on an active region;
- a charge storage layer on the tunneling insulating layer;
- a blocking insulating layer on the charge storage layer;
- and
- a control gate electrode on the blocking insulating layer,
- wherein the control gate electrode has an edge portion spaced farther apart from the blocking insulating layer than a central portion of the control gate electrode, and
- wherein the control gate electrode has an inverted mesa structure having two opposing inclined surfaces each joined at one end to a bottom surface of the control gate electrode and at another end to a surface of the control gate electrode extending in a perpendicular direction to the bottom surface of the control gate electrode.
4 more elements
Dependencies are inferred from the claim text.