Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency

A non-volatile memory (NVM) device, comprising:

• a semiconductor substrate having a first region and a second region approximate the first region;
• a data-storing structure formed in the first region and designed operable to retain charges;
• and
• a capacitor formed in the second region and coupled with the data-storing structure, wherein the capacitor includes:
• a first doped well of a first-type dopant formed in the semiconductor substrate;
• a second doped well of a second-type dopant opposite from the first-type dopant and formed in the semiconductor substrate, wherein the second doped well is on and directly contacts the first doped well;
• a first gate dielectric feature on the second doped well;
• and
• a first gate electrode disposed on the first gate dielectric feature.

A method for forming a non-volatile memory (NVM) device, comprising:

• providing a semiconductor substrate having a first region and a second region that is approximate the first region;
• forming a first doped well in the first region;
• forming a second doped well in the second region, wherein the first and second doped wells are of a first-type dopant and are isolated from each other;
• forming a data-storing structure in the first doped well, wherein the data-storing structure includes a first gate stack;
• and
• forming a second gate stack on the second doped well, resulting in a capacitor.