Display device

A semiconductor device comprising:

• a line;
• a common wiring;
• a first non-linear element comprising:
• a first gate electrode layer;
• a gate insulating layer over the first gate electrode layer;
• a first wiring layer over the gate insulating layer;
• a second wiring layer over the gate insulating layer;
• and
• a first oxide semiconductor layer in contact with the gate insulating layer, the first wiring layer, and the second wiring layer;
• a second non-linear element comprising:
• a second gate electrode layer;
• the gate insulating layer over the second gate electrode layer;
• a third wiring layer over the gate insulating layer;
• a fourth wiring layer over the gate insulating layer;
• and
• a second oxide semiconductor layer in contact with the gate insulating layer, the third wiring layer, and the fourth wiring layer;
• and
• a third non-linear element comprising a third gate electrode layer, a fifth wiring layer, a sixth wiring layer, and a third oxide semiconductor layer,
• wherein the common wiring is electrically connected to the first gate electrode layer, the first wiring layer, and the fifth wiring layer,
• wherein the line is electrically connected to the second gate electrode layer, the third wiring layer, and the sixth wiring layer,
• wherein the third gate electrode layer is electrically connected to the second wiring layer and the fourth wiring layer, and
• wherein the line is in direct contact with the third wiring layer and the sixth wiring layer.