Semiconductor device and method for manufacturing the same

A display device comprising:

• a gate electrode and a first electrode over an insulating surface;
• a first insulating film over the gate electrode and the first electrode;
• an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween;
• a source electrode, a drain electrode, and a second electrode over the first insulating film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor;
• a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode;
• a pixel electrode, and a transparent conductive layer over the second insulating film,
• wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film, and
• wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film, and the second electrode through the second insulating film.

A display device comprising:

• a gate electrode, a capacitor electrode and a first electrode over an insulating surface;
• a first insulating film over the gate electrode, the capacitor electrode and the first electrode;
• an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween;
• a source electrode, a drain electrode, and a second electrode over the oxide semiconductor layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer;
• a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode;
• a pixel electrode, and a transparent conductive layer over the second insulating film,
• wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film,
• wherein the pixel electrode overlaps with the capacitor electrode to form a capacitor, and
• wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film and the second electrode through the second insulating film.

A display device comprising:

• a gate electrode, a capacitor electrode and a first electrode over an insulating surface;
• a first insulating film over the gate electrode, the capacitor electrode and the first electrode;
• an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween;
• a source electrode, a drain electrode, and a second electrode over the first insulating film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor;
• a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode;
• a pixel electrode, and a transparent conductive layer over the second insulating film,
• wherein the pixel electrode is electrically connected to the drain electrode through the second insulating film,
• wherein the pixel electrode overlaps with the capacitor electrode to form a capacitor, and
• wherein the transparent conductive layer is electrically connected to the first electrode through the first insulating film and the second insulating film, and the second electrode through the second insulating film.