Nanowire sized opto-electronic structure and method for manufacturing the same
AssigneeGlo AB
InventorsTruls Lowgren, Ghulam Hasnain
Life of this patent
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Abstract
An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a minor provided on a second conductivity type semiconductor side of the structure.
Claims26
An opto-electric structure, comprising:
- a plurality of nano elements arranged side by side on a support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction;
- a first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor;
- and
- a mirror provided on a second conductivity type semiconductor side of the structure.
A method of manufacturing an opto-electronic structure, comprising:
- providing a support layer;
- providing a plurality of nano elements arranged side by side on the support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction;
- providing a first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor;
- and
- providing a mirror on a second conductivity type semiconductor side of the structure.
Dependencies are inferred from the claim text.