Back to results
US 2013/0092871 A1Published application
Composition for polishing silicon carbide substrate and method for polishing silicon carbide substrate
AssigneeNissan Chemical Industries, Ltd.
InventorsKazutoshi Sekiguchi, Tohru Nishimura
Life of this patent
Estimating the term…
Abstract
A silicon carbide substrate polishing composition for polishing a surface of a silicon carbide substrate contains water and colloidal silica particles having a true specific gravity of 2.10 to 2.30, and has a free alkali metal ion concentration of 1 ppm to 150 ppm.
Claims9
A silicon carbide substrate polishing composition for polishing a surface of a silicon carbide substrate, wherein the composition comprises water and colloidal silica particles having a true specific gravity of 2.10 to 2.30, and has a free alkali metal ion concentration of 1 ppm to 150 ppm.
Dependencies are inferred from the claim text.