Semiconductor Device and Method of Forming Stacked Vias Within Interconnect Structure for FO-WLCSP

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• depositing an encapsulant over the semiconductor die;
• forming a first insulating layer over the encapsulant and semiconductor die;
• forming a plurality of first vias through the first insulating layer;
• forming a first conductive layer over the first insulating layer and into the first vias;
• forming a second insulating layer over the first insulating layer and first conductive layer;
• and
• forming a plurality of second vias through the second insulating layer and aligned with the first vias to expose the first conductive layer.

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• depositing an encapsulant over the semiconductor die;
• forming a first insulating layer over the encapsulant and semiconductor die;
• forming a plurality of first vias through the first insulating layer;
• forming a first conductive layer over the first insulating layer and into the first vias;
• forming a second insulating layer over the first insulating layer and first conductive layer;
• and
• forming a plurality of second vias through the second insulating layer to expose the first conductive layer.

A semiconductor device, comprising:

• a semiconductor die;
• an encapsulant deposited over the semiconductor die;
• a first insulating layer formed over the encapsulant and semiconductor die;
• a plurality of first vias formed through the first insulating layer;
• a first conductive layer formed over the first insulating layer and into the first vias;
• a second insulating layer formed over the first insulating layer and first conductive layer;
• and
• a plurality of second vias formed through the second insulating layer to expose the first conductive layer.