Multilayer Connection Structure and Making Method
AssigneeMacronix International Co., Ltd.
InventorsShih-Hung Chen, Yan-Ru Chen, Lo-Yueh Lin
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AssigneeMacronix International Co., Ltd.
InventorsShih-Hung Chen, Yan-Ru Chen, Lo-Yueh Lin
Estimating the term…
An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers.
An IC device comprising:
A three-dimensional stacked IC device comprising:
A method for creating electrical conductors for an IC device, the IC device comprising a stack of contact levels, each contact level comprising a conductive layer and an insulation layer, the method comprising:
A method for creating electrical conductors for a three-dimensional stacked IC device, the IC device comprising a stack of at least first, second, third and fourth contact levels, each contact level comprising a conductive layer and an insulation layer, the method comprising:
Dependencies are inferred from the claim text.