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US 2013/0075912 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Wakatsuki, Ichiro Mizushima, Atsuko Sakata, Masayuki Kitamura
Life of this patent
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a silicon oxide film on a semiconductor substrate;
- forming a via in the silicon oxide film;
- forming a contact layer inside the via;
- forming a silicon layer on the contact layer;
- and
- forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
3 more elements
A semiconductor device having a plug, the plug comprising:
- a via provided in a silicon oxide film on a semiconductor substrate;
- a contact layer inside the via;
- and a tungsten film embedded in the via.
A semiconductor device having a plug, the plug comprising:
- a via provided in a silicon oxide film on a semiconductor substrate;
- a contact layer selectively formed on an upper part of a side wall inside the via;
- and a tungsten film embedded in the via.
Dependencies are inferred from the claim text.