Flip chip type full wave rectification semiconductor device and its manufacturing method

A flip-chip type full-wave rectification semiconductor device which includes:

• a PNNP type and an NPPN type flip-chip separated from each other, all bumps of said flip-chip are located on an identical surface;
• four pins each having at least a connecting end and a circuit connecting end, wherein said connecting ends of said four pins are respectively connected by soldering with said bumps of said two flip-chips according to circuit arrangement of a bridge rectifier, said four circuit connecting ends are electrically connected with an external circuit;
• and
• a packing member enveloping outer portions of said two flip-chips and said four pins, and making exposing of said circuit connecting ends of said four pins.

A flip-chip type full-wave rectification semiconductor device which includes:

• a PNNP type or an NPPN type flip-chip, all bumps of said flip-chip are located on an identical surface;
• three pins each having at least a connecting end and a circuit connecting end, wherein said connecting ends of said three pins are respectively connected by soldering with said bumps of said two flip-chip according to circuit arrangement of a center-tap full-wave rectifier, said three circuit connecting ends are electrically connected with an external circuit;
• and
• a packing member enveloping outer portions of said flip-chip and said three pins, and making exposing of said circuit connecting ends of said three pins.