US 2013/0075865 A1Published application

Semiconductor device

AssigneeSemiconductor Components Industries, LLC

InventorsSeiji OTAKE, Yasuhiro TAKEDA, Yuta MIYAMOTO

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Abstract

An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar transistor which uses a second P+ type buried layer connected to a P+ type diffusion layer as the emitter, an N− type epitaxial layer as the base, and the first P+ type buried layer as the collector. The first P+ type buried layer is connected to an anode electrode, and the P+ type diffusion layer and an N+ type diffusion layer surrounding the P+ type diffusion layer are connected to a cathode electrode. When a large positive static electricity is applied to the cathode electrode, and the parasitic PNP bipolar transistor turns on to flow a large discharge current.

A semiconductor device comprising:

a semiconductor substrate of a first general conductivity type;
an epitaxial layer of a second general conductivity type formed on the semiconductor substrate;
a first buried layer of the second general conductivity type formed between the semiconductor substrate and the epitaxial layer;
a second buried layer of the first general conductivity type connected to a peripheral edge region of the first buried layer and extending from inside the semiconductor substrate into the epitaxial layer;
a third buried layer of the first general conductivity type connected to a center region of the first buried layer and extending from top and bottom surface portions of the first buried layer into the epitaxial layer and the semiconductor substrate respectively;
a first drawing layer and a second drawing layer of the first general conductivity type each extending from a surface portion of the epitaxial layer into the epitaxial layer so as to be connected to the second buried layer and the third buried layer respectively;
a first diffusion layer of the first general conductivity type extending from a surface portion of the epitaxial layer into the epitaxial layer and connected to the second drawing layer so as to be surrounded by the second buried layer and the first drawing layer in plan view of the semiconductor substrate, the first buried layer covering a bottom portion of the first diffusion layer;
a second diffusion layer of the second general conductivity type connected to and surrounding the first diffusion layer in the plan view;
a cathode electrode connected to the first diffusion layer and the second diffusion layer;
and
an anode electrode connected to the first drawing layer,
wherein the first buried layer and the second buried layer are configured to form a PN junction diode,
the third buried layer, the epitaxial layer and the second buried layer are configured to form a parasitic bipolar transistor, and
the PN junction diode and the parasitic bipolar transistor are configured to form an ESD protection element.

11 more elements

Abstract

Claims6