Semiconductor device
AssigneeRenesas Electronics Corporation
InventorAtsuki Ono
Life of this patent
Estimating the term…
Abstract
A semiconductor device has an electrical fuse formed on a substrate, having a first interconnect, a second interconnect respectively formed in different layers, and a via provided in a layer between the first interconnect and the second interconnect, connected to one end of the second interconnect and connected also to the first interconnect; and a guard interconnect portion formed in the same layer with the second interconnect, so as to surround such one end of the second interconnect, wherein, in a plan view, the second interconnect is formed so as to extend from the other end towards such one end, and the guard interconnect portion is formed so as to surround such one end of the second interconnect in three directions, while placing such one end at the center thereof.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first insulating layer formed over the substrate;
- an electrical fuse formed over the substrate, having a first interconnect formed in the first insulating layer and a via connected to one end region of the first interconnect;
- a first guard interconnect formed in the first insulating layer and, facing a first side of the first interconnect in a plan view;
- a second guard interconnect formed in the first insulating layer and, facing the one end region of the first interconnect in a plan view;
- and
- a third guard interconnect formed in the first insulating layer and, facing a second side of the first interconnect in a plan view,
- wherein the first side is an opposite side of the second side in a plan view,
- wherein the first side and the second side are formed to sandwich the one end region in the plan view,
- wherein the first guard interconnect, the second guard interconnect and the third guard interconnect are not connected each other,
- wherein only the first insulating layer is formed between the first guard interconnect and the first interconnect in the plan view,
- wherein only the first insulating layer is formed between the second guard interconnect and the first interconnect in the plan view, and
- wherein only the first insulating layer is formed between the third guard interconnect and the first interconnect in the plan view.
A semiconductor device, comprising:
- a substrate;
- an electrical fuse formed over the substrate, having a first interconnect and a second interconnect, respectively formed in a different layers, and a via provided in a layer between the first interconnect and the second interconnect, the via being connected to one end of the second interconnect and connected also to the first interconnect;
- and
- a first guard interconnect, a second guard interconnect, and a third guard interconnect are formed in the same layer with the second interconnect so as to surround the one end of the second interconnect,
- wherein, in a plan view, the second interconnect is formed so as to extend from the other end towards the one end, and the first guard interconnect, the second guard interconnect, and the third guard interconnect are formed so as to surround the one end of the second interconnect in three directions, and
- wherein the first guard interconnect, the second guard interconnect, and the third interconnect are not connected to each other.
Dependencies are inferred from the claim text.