Integrated Circuit Structure and Method of Forming the Same

An integrated circuit (IC) structure comprising:

• a first pickup device in a deep n well, the deep n well being in a substrate;
• a first signal device in the deep n well;
• a dissipation device in the substrate, the dissipation device being outside of the deep n well;
• and
• a first electrical path between the first pickup device and the dissipation device, the first electrical path comprising a first conductive feature in a first dielectric layer over the substrate, the first conductive feature comprising a highest point above the substrate of the first electrical path, a second electrical path not being between the first signal device and a second signal device in the first dielectric layer, an underlying dielectric layer, or a combination thereof, the second signal device being outside of the deep n well.

A method for forming an integrated circuit structure, the method comprising:

• forming a deep n-well in a substrate;
• forming a first pickup device in the deep n-well;
• forming a first signal device in the deep n-well;
• forming a dissipation device in the substrate and outside of the deep n-well;
• forming a first electrical path between the first pickup device in the deep n-well and the dissipation device;
• and
• after forming the first electrical path, forming a second electrical path between the first signal device in the deep n-well and a second signal device outside of the deep n-well.