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US 2013/0075844 A1Published application
Semiconductor device and manufacturing method thereof
OwnerKiyotaka Miyano, Tomonori Aoyamainventors
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Abstract
A semiconductor device according to the present embodiment comprises a lower electrode provided above a semiconductor substrate and made of metal, an upper electrode provided above the lower electrode and made of metal, and a crystal layer provided between the lower electrode and the upper electrode. A thickness of each of the lower electrode and the upper electrode is smaller than a thickness of a skin layer deriving from a skin effect corresponding to a frequency of a microwave used to crystallize the crystal layer.
Claims18
A semiconductor device comprising:
- a lower electrode provided above a semiconductor substrate and made of metal;
- an upper electrode provided above the lower electrode and made of metal;
- and
- a crystal layer provided between the lower electrode and the upper electrode, wherein
- a thickness of each of the lower electrode and the upper electrode is smaller than a thickness δs of a skin layer deriving from a skin effect corresponding to a frequency of a microwave used to crystallize the crystal layer.
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A method of manufacturing a semiconductor device, the method comprising:
- forming a lower electrode above a semiconductor substrate;
- forming an amorphous layer on the lower electrode;
- forming an upper electrode on the amorphous layer;
- and
- crystallizing the amorphous layer into a crystal layer by irradiating the amorphous layer with a microwave, wherein
- a thickness of each of the lower electrode and the upper electrode is smaller than a thickness of a skin layer deriving from a skin effect corresponding to a frequency of the microwave used to crystallize the crystal layer.
3 more elements
Dependencies are inferred from the claim text.