Electrostatic discharge protection device
AssigneeNuvoton Technology Corporation
InventorMing-Fang LAI
Life of this patent
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Abstract
An electrostatic discharge (ESD) protection device includes a first transistor and a second transistor. The first transistor includes a first bulk electrode, a first electrode and a second electrode. The first bulk electrode and the first electrode form a first parasitic diode. The first bulk electrode and the second electrode form a second parasitic diode. The second transistor includes a second bulk electrode, a third electrode and a fourth electrode. The second bulk electrode and the third electrode form a third parasitic diode. The second bulk electrode and the fourth electrode form a fourth parasitic diode. The first bulk electrode is connected to the third electrode, and the second bulk electrode is connected to the first electrode.
Claims12
An electrostatic discharge (ESD) protection device comprising:
- a first transistor comprising a first bulk electrode, a first electrode and a second electrode, the first bulk electrode and the first electrode forming a first parasitic diode, the first bulk electrode and the second electrode forming a second parasitic diode;
- and
- a second transistor comprising a second bulk electrode, a third electrode and a fourth electrode, the second bulk electrode and the third electrode forming a third parasitic diode, the second bulk electrode and the fourth electrode forming a fourth parasitic diode;
- wherein the first bulk electrode is connected to the third electrode, and the second bulk electrode is connected to the first electrode.
An electrostatic discharge (ESD) protection device comprising:
- a first transistor comprising a first bulk electrode, a first electrode and a second electrode, the first transistor comprising a first parasitic diode and a second parasitic diode therein;
- and
- a second transistor comprising a second bulk electrode, a third electrode and a fourth electrode, the second transistor comprising a third parasitic diode and a fourth parasitic diode therein;
- wherein the first parasitic diode, the second parasitic diode, the third parasitic diode, and the fourth parasitic diode are configured to selectively conduct an ESD current flowing between two of the first electrode, the second electrode, the third electrode, and the fourth electrode.
Dependencies are inferred from the claim text.