Semiconductor device with a semiconductor via

A method for producing a semiconductor device, comprising:

• providing a semiconductor body having a first surface, a second surface and a semiconductor via, the semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface and being insulated from the semiconductor body by a via insulation layer;
• etching at least one trench that extends from the first surface into the semiconductor body, wherein the at least one trench in a first lateral direction of the semiconductor body extends through the via insulation layer into the semiconductor via;
• forming at least one electrode in the at least one trench such that the at least one electrode is dielectrically insulated from semiconductor regions of the semiconductor body and is electrically connected to the semiconductor via;
• and
• forming a contact electrode on the semiconductor via on the second surface.