Semiconductor power devices integrated with a trenched clamp diode
AssigneeForce Mos Technology Co., Ltd.
InventorFu-Yuan HSIEH
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Abstract
A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is formed by the first poly-silicon layer. A shielded gate mask used to define the shielded gate is also used to define the trenched clamp diode. Therefore, one poly-silicon layer and a mask for the trenched clamp diode are saved.
Claims15
A semiconductor power device integrated with a trenched clamp diode comprising;
- a plurality of a first type trenches extending into a semiconductor silicon layer, surrounded by source regions of a first conductivity type encompassed in body regions of a second conductivity type in a active area;
- and
- a trenched clamp diode comprising multiple back to back poly-silicon Zener diodes with alternating doped regions of said first conductivity type next to doped regions of said second conductivity type, formed in a second type trench as a clamp diode trench extending into said semiconductor silicon layer.
Dependencies are inferred from the claim text.