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US 2013/0075791 A1Published application
Depleted charge-multiplying ccd image sensor
AssigneeSemiconductor Components Industries, LLC
InventorChristopher Parks
Life of this patent
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Abstract
In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.
Claims14
A charge-coupled device (CCD) comprising:
- a channel for transfer of charge carriers therein, the channel having a first conductivity type;
- disposed over the channel, a plurality of gate electrodes for controlling transfer of charge carriers within the channel;
- laterally spaced away from opposite sides of the channel, first and second channel stops having a second conductivity type opposite the first conductivity type;
- and
- disposed between the channel and each of the first and second channel stops, a fully depleted region.
2 more elements
A method of forming a charge-coupled device (CCD), the method comprising:
- forming a channel disposed within a substrate, the channel having a first conductivity type;
- forming, over the channel, a plurality of gate electrodes for controlling transfer of charge carriers within the channel;
- and
- forming, laterally spaced away from opposite sides of the channel, first and second channel stops having a second conductivity type opposite the first conductivity type,
- wherein the first and second channel stops are each spaced away from the channel by a fully depleted region.
2 more elements
Dependencies are inferred from the claim text.